Home » Ion Implantation

Ion implantation is a material engineering process, by which ions of a material are accelerated in an electrical field and impacted into another solid. This process is used for changing the physical, chemical or electrical properties of the solid. Ion implantation can be widely used in semiconductor device fabrication, metal finishing as well as various applications in materials science research.

Ion implantation equipment typically consists of an ion source, an accelerator and a target chamber. In a certain extent, ion implantation is a special case of particle radiation. Each ion is typically a single atom or molecule and thus the actual amount of material implanted in the target is the integral ion current. LTWM offers molybdenum, tungsten ion sources and parts to large, medium and high-energy beam ion implanters. The products we produced could make it possible that the beam is precisely guided and the electrons are generated at temperatures up to 1600°C.

1. Most molybdenum, tungsten ion sources and parts for ion implantation are used in the semiconductor industry;
2. They are also used in the solar industry for producing rotation sputtering targets;
3. We also produce them for X-ray and electron tubes;
4. Molybdenum, tungsten ion sources and parts for ion implantation can also be applied in doping, silicon on insulator, surface finishing, tool steel toughening and ion beam mixing.

1. Ion implantation has very precise and independent control of the dose and impurity depth;
2. It works very fast. Wafer in1 6" only take as little as 6 seconds for a moderate dose;
3. By adopting ion implantation, complex profiles can be achieved by multi-energy implants.